Li, ShuaiLiu, XinjunNandi, SanjoyVenkatachalam, DineshElliman, Robert2015-12-130003-6951http://hdl.handle.net/1885/70502Electrical self-oscillation is reported for a Ti/NbO<inf>x</inf> negative differential resistance device incorporated in a simple electric circuit configuration. Measurements confirm stable operation of the oscillator at source voltages as low as 1.06 V,Author/s retain copyrightKeywords: Physical properties; Bi-layer structure; Circuit configurations; Device operations; Low operating voltage; Negative differential resistance device; Neuromorphic computing; Operating frequency; Self-oscillations; Negative resistance201510.1063/1.49217452021-08-01