Wang, SisiMacdonald, Daniel2015-09-212015-09-210021-8979http://hdl.handle.net/1885/15590The Auger lifetime in crystalline silicon has been measured under high injection conditions using an injection- and temperature-dependent photoconductance apparatus, across a temperature range from 243 to 473 K (−30 to 200 °C). The corresponding ambipolar Auger coefficient was found to have a value of 1.6 × 10⁻³⁰ cm⁶/s at 303 K (30 °C) at an injection level of 5 × 10¹⁶ cm¯³. The Auger coefficient was found to decrease between 243 K and 303 K, and then remain approximately constant up to 473 K. An empirical parameterization of the measured ambipolar Auger coefficient is provided.http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 21/09/15). Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://dx.doi.org/10.1063/1.4768900Keywords: Ambipolar; Auger recombination; Crystalline silicons; High injection; Injection levels; Photoconductance; Temperature dependence; Temperature dependent; Temperature range; Crystalline materials; Silicon; Augers2012-12-0610.1063/1.47689002016-02-24