Mortemousque, P. A.Sekiguchi, T.Culan, C.Vlasenko, M. P.Elliman, R. G.Vlasenko, L. S.Itoh, K. M.2015-09-182015-09-180003-6951http://hdl.handle.net/1885/15558Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal intensity distributions drastically different from that observed in conventional electron paramagnetic resonance, attributed to different recombination rates for the forty possible combinations of spin states of a pair of a Bi donor and a paramagnetic recombination center. An excellent tunability of Bi excitation energy for the future coupling with superconducting flux qubits at low fields has been demonstrated.This work was supported in part by Grant-in-Aid for Scientific Research and Project for Developing Innovation Systems by MEXT, FIRST, and JST-EPSRC/SIC (EP/H025952/1).http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 18/09/15). Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://dx.doi.org/10.1063/1.4747723Keywords: Low field; Low magnetic fields; Recombination centers; Recombination rate; Resonance frequencies; Signal intensity distribution; Spin state; Spin-dependent recombination; Superconducting flux; Tunabilities; Magnetic resonance; Magnetic resonance spectrosc2012-08-2210.1063/1.47477232016-02-24