Burgess, TimothyDu, S.Gault, B.Gao, QiangZheng, RongkunJagadish, ChennupatiTan, Hark Hoe2015-12-10December 19781467330459http://hdl.handle.net/1885/60190The zinc dopant concentration and distribution in GaAs nanowires is quantified by atom probe tomography. Material deposited radially by a vapour-solid process is shown to have a significantly higher dopant concentration in comparison to the core which grows by the vapour-liquid-solid process. Zinc concentrations of up to 7×1019 and 5×1020 atoms/cm3 are measured for core and shell materials respectively. Dopant activation is confirmed by electrical characterization which demonstrates an orders of magnitude increase in nanowire conductivity.Keywords: Atom probe tomography; Dopant activation; Dopant concentrations; Electrical characterization; Nanowire conductivity; Orders of magnitude; Shell materials; Zinc concentration; Gallium arsenide; Microelectronics; Semiconducting gallium; Semiconductor doping201210.1109/COMMAD.2012.64723502016-02-24