Glover, ChristopherRidgway, Mark CYu, Kin ManForan, Garry JLee, T WMoon, YYoon, Euijoon2015-12-130003-6951http://hdl.handle.net/1885/93685Extended X-ray absorption fine structure measurements at the In K edge of stoichiometric InP amorphized by ion implantation reveal overcoordination of the In atom constituents and the presence of chemical disorder in the form of like-atom bonding. Excellent agreement is found between the measured bond-lengths and coordination numbers and recent theoretical calculations. The fraction of like-atom bonding is significant, suggesting that amorphous InP is best described by a Polk-like continuous random network with both even- and odd-membered rings.Keywords: Absorption spectroscopy; Amorphization; Amorphous materials; Chemical bonds; Crystal atomic structure; Ion implantation; X ray spectroscopy; Chemical disorder; Extended X ray absorption fine structure (EXAFS) spectroscopy; Semiconducting indium phosphide19992015-12-12