Guo, Y. N.Zou, J.Paladugu, MohanchandWang, H.Gao, Q.Jagadish, C.Tan, Hark Hoe2015-10-232015-10-230003-6951http://hdl.handle.net/1885/16058Highly lattice mismatched (7.8%) GaAs∕GaSbnanowireheterostructures were grown by metal-organic chemical vapor deposition and their detailed structural characteristics were determined by electron microscopy. The facts that (i) no defects have been found in GaSb and its interfaces with GaAs and (ii) the lattice mismatch between GaSb∕GaAs was fully relaxed suggest that the growth of GaSbnanowires is purely governed by the thermodynamics. The authors believe that the low growth rate of GaSbnanowires leads to the equilibrium growth.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 23/10/15). Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2402234Keywords: Electron microscopy; Heterojunction bipolar transistors; Metallorganic chemical vapor deposition; Semiconducting gallium arsenide; Thermodynamics; Lattice mismatch; Nanowire heterostructures; Nanowires; Nanostructured materials2006-12-0610.1063/1.24022342015-12-08