Parkinson, Patrick WallaceJoyce, Hannah JGao, QiangZhang, XinJagadish, ChennupatiHerz, LauraJohnston, Michael BTan, Hark Hoe2015-12-101530-6984http://hdl.handle.net/1885/55084We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.Keywords: Bandgap materials; Charge-carrier mobility; Core-shell; Core-shell nanowires; Defect-free; GaAs; Mobility enhancement; Surface trap; Tera Hertz; Terahertz spectroscopy; Time-resolved; Two-temperature; Carrier lifetime; Electric wire; Electronic properties200910.1021/nl90163362016-02-24