Voronkov, VFalster , RBatunina, AMacDonald, DanielBothe, KarstenSchmidt, Jan2015-12-08Septemberhttp://hdl.handle.net/1885/35746The recombination centre that emerges in boron- and oxygen-containing silicon was thought to be a complex of a substitutional boron atom Bs and an oxygen dimer O2. However in material co-doped with boron and phosphorus, the degradation parameters were reported to correlate with the hole concentration p rather than with the boron concentration. In the present work, the temperature dependence of the Hall Effect was measured in co-doped and reference samples and the concentrations of isolated acceptors Na and of donors Nd were deduced. The value of Na was found to be substantially larger than p and close to the expected total concentrations of boron. This result clearly shows that the reported correlation of the degradation with p implies a lack of correlation with Na. Such a behaviour is accounted for by a model based on formation of BiO2 complexes (involving an interstitial boron atom Bi rather than Bs): the grown-in concentration of this species is proportional to p and independent of Na.Keywords: Boron atom; Boron concentrations; Boron-doped; Co-doped; Czochralski silicon; Degradation parameter; Electron lifetime; Interstitial boron; Lifetime degradation; Model-based; Oxygen dimers; Recombination centres; Temperature dependence; Concentration (pro Boron; Electron lifetime; Oxygen; Silicon201110.1016/j.egypro.2011.01.0082016-02-24