Kim, Tae-HyunShalav, AviElliman, Robert2015-12-10December 19781424473335http://hdl.handle.net/1885/51655This study investigates the controlled lateral growth of amorphous silica nanowires using the Si active oxidation as the dominant SiO vapour precursor for nanowire growth. The development of complex multi-layered core shell nanowire structures using a combination of both active Si oxidation and secondary coating techniques is also demonstrated.Keywords: Amorphous silica; Lateral growth; Multi-layered; Nanowire growth; Si oxidation; Silica nano wires; Amorphous silicon; Microelectronics; Oxidation; Silica; Nanowires201010.1109/COMMAD.2010.56997792016-02-24