Wong-Leung, JenniferLinnarsson, M KSvensson, Bengt Gunnar2015-12-132015-12-130921-4526http://hdl.handle.net/1885/87851We study the effect of substrate orientation on defect formation in 4H-SiC. Both (112̄0) and (0001) n-type 4H-SiC substrates were implanted with 400 keV P. The various samples, both as-implanted samples and annealed, were studied by Rutherford backscatteKeywords: Annealing; Chemical activation; Crystal defects; Crystal orientation; Hydrogen bonds; Ion implantation; Recrystallization (metallurgy); Rutherford backscattering spectroscopy; Secondary ion mass spectrometry; Silicon wafers; Transmission electron microsco Extended defects; Ion implantation; Silicon carbide200310.1016/j.physb.2003.09.0522015-12-12