Linnarsson, M KZimmermann, UWong-Leung, JenniferSchoner, AJanson, M SJagadish, ChennupatiSvensson, Bengt Gunnar2015-12-130169-4332http://hdl.handle.net/1885/88359Epitaxial 4H-SiC structures with heavily boron or aluminium doped layers have been prepared by vapour phase epitaxy. The samples have been annealed in Ar atmosphere in an RF-heated furnace between 1700 and 2000 °C for 45 min to 64 h. Secondary ion mass sKeywords: Annealing; Doping (additives); Furnaces; Phase composition; Precipitation (chemical); Secondary ion mass spectrometry; Solubility; Transmission electron microscopy; Vapor phase epitaxy; Solubility limits; Silicon carbide Precipitates; SiC; SIMS; Solubility limit; TEM200310.1016/S0169-4332(02)00694-32015-12-12