Investigation of field-effect passivation and interface state parameters at the Al 2 O 3 /Si interface

Liang, WenshengWeber, KlausSuh, Dong ChulRen, Yongling2015-12-07September3936338280http://hdl.handle.net/1885/26275Author/s retain copyrightInvestigation of field-effect passivation and interface state parameters at the Al 2 O 3 /Si interface201210.4229/27thEUPVSEC2012-2AV.6.232015-12-07