Wang, HaoYuan, Jiayuevan Veldhoven, Rene P Jde Vries, TjibbeSmalbrugge, BarryGeluk, Erik JanNötzel, Richard2015-11-192015-11-190021-8979http://hdl.handle.net/1885/16526Position-controlled InAs quantum dots(QDs) are integrated into planar InP structures by employing selective area growth of InP pyramids and regrowth by metalorganic vapor-phase epitaxy. A smooth surface morphology is obtained at elevated regrowth temperature due to suppression of three-dimensional growth on the pyramids. The height differences are less than 30 nm after nominal 700 nm InP regrowth at 640 °C. Most important, the integrated QDs maintain good optical quality after regrowth for the realization of integrated nanophotonic devices and circuits operating at telecom wavelengths.http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 19/11/15). Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.34910252010-11-1910.1063/1.3491025