Li, NaFu, LanLi, NingChan, Yan-CheongLu, WeiShen, S CJagadish, ChennupatiTan, Hark Hoe2015-12-100022-0248http://hdl.handle.net/1885/68455The asymmetry of GaAs/AlGaAs quantum wells grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) is investigated by measuring the current-voltage (I-V) and responsivity characteristics of quantum well infrared photodetectors (QWIPs). Different asymmetry behaviors were observed in MBE and MOCVD grown devices due to their different growth mechanisms. Furthermore, the role of one of the post-growth techniques, ion implantation induced quantum well intermixing, on varying the asymmetry of the MBE QWIPs was also studied.Keywords: Current voltage characteristics; Infrared detectors; Ion implantation; Metallorganic chemical vapor deposition; Molecular beam epitaxy; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor growth; Aluminum gallium arsenide; Qu200110.1016/S0022-0248(00)01003-42015-12-10