Jiang, NianJoyce, Hannah JaneParkinson, PatrickWong-Leung, JenniferTan, Hark HoeJagadish, Chennupati2023-04-272023-04-272296-2646http://hdl.handle.net/1885/289730The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoelectronics arising from its unique geometry. This structure gives rise to a large surface area-to-volume ratio and therefore understanding the effect of nanowire surfaces on nanowire optoelectronic properties is necessary for engineering related devices. We present a systematic study of the non-uniform optical properties of Au-catalyzed GaAs/AlGaAs core–shell nanowires introduced by changes in the sidewall faceting. Significant variation in intra-wire photoluminescence (PL) intensity and PL lifetime (τPL) was observed along the nanowire axis, which was strongly correlated with the variation of sidewall facets from {112} to {110} from base to tip. Faster recombination occurred in the vicinity of {112}-oriented GaAs/AlGaAs interfaces. An alternative nanowire heterostructure, the radial quantum well tube consisting of a GaAs layer sandwiched between two AlGaAs barrier layers, is proposed and demonstrates superior uniformity of PL emission along the entire length of nanowires. The results emphasize the significance of nanowire facets and provide important insights for nanowire device design.This work was supported by ERC A Cross-Correlated Approach to Engineering Nitride Nanowires (ACrossWire 716471) from HJ and a UKRI Future Leaders Fellowship (MR/T021519/1) from PP. The Australian Research Council (ARC) is acknowledged for its financial support, and the authors acknowledge the use of facilities in the Center of Advanced Microscopy (AMMRF node), the ACT node of the Australian National Fabrication Facility. HJ acknowledges her ERC Starting Grant (ACrossWire 716471)application/pdfen-AUCopyright © 2020 Jiang, Joyce, Parkinson, Wong-Leung, Tan and Jagadish.https://creativecommons.org/licenses/by/4.0/nanowirephotoluminescence (PL)nanowire sidewall facetssurface recombinationuniformityGaAs-AlGaAs202010.3389/fchem.2020.6074812022-02-06Creative Commons Attribution License