Caroff, PhilippeJeppsson, MattiasWheeler, DKeplinger, MMandl, BStangl, JSeabaugh, ABauer, GWernersson, Lars-Erik2015-12-101742-6588http://hdl.handle.net/1885/58382We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580°C for a thickness of 2 μm. We measured a high value of the electron mobiliKeywords: High quality; InAs; Layer thickness; Metal-organic vapor phase epitaxy; Morphological properties; Nucleation layers; Room temperature; Si (1 1 1); Two-step procedure; Atomic force microscopy; Crystal atomic structure; Crystal growth; Electric properties;200810.1088/1742-6596/100/4/0420172016-02-24