Tan, H. H.Fu, L.Johnston, M. B.Dao, L. V.Gal, M.Jagadish, C.2025-12-312025-12-31ORCID:/0000-0002-7816-537X/work/167653236ORCID:/0000-0002-9070-8373/work/167653438ORCID:/0000-0003-1528-9479/work/167653577https://hdl.handle.net/1885/733797579Ion (proton) implantation was used to induce intermixing in GaAs-AlGaAs quantum wells. Very large energy shifts (up to 160 meV) were observed after annealing. However, the energy shift was further improved with a repeated implant-anneal sequence. Up to about a factor of two increase in the energy shifts were obtained. This sequence was then used to fabricate laser diodes for multi-wavelength device integration. A remarkable improvement in the laser threshold characteristics was obtained with this sequence compared to a single implant.4en199910.1109/COMMAD.1998.7916160032691857