Capiod, P.Xu, T.Nys, J. P.Berthe, M.Patriarche, G.Lymperakis, L.Neugebauer, J.Caroff, P.Dunin-Borkowski, R. E.Ebert, Ph.Grandidier, B.2015-09-222015-09-220003-6951http://hdl.handle.net/1885/15647The band structure and the Fermi level pinning at clean and well-ordered sidewall surfaces of zincblende (ZB)-wurtzite (WZ) GaAs nanowires are investigated by scanning tunneling spectroscopy and density functional theory calculations. The WZ-ZB phase transition in GaAs nanowires introduces p-i junctions at the sidewall surfaces. This is caused by the presence of numerous steps, which induce a Fermi level pinning at different energies on the non-polar WZ and ZB sidewall facets.This study was financially supported by the EQUIPEX program Excelsior, the European Community’s Seventh Framework Program (Grant No. PITN-GA-2012- 316751, “Nanoembrace” Project) and the Impuls- und Vernetzungsfonds of the Helmholtz-Gemeinschaft Deutscher Forschungszentren under Grant No. HIRG-0014. T. Xu acknowledges the support from the National Natural Science Foundation of China (Grant No. 61204014).http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 22/09/15). Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Capiod, P., et al. "Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces." Applied Physics Letters 103.12 (2013): 122104.) and may be found at https://doi.org/10.1063/1.4821293Keywords: Band offsets; Fermi level pinning; Gaas nanowires; Non-polar; Scanning tunneling spectroscopy; Wurtzites; Zinc-blende; Fermi level; Gallium arsenide; Nanowires; Scanning tunneling microscopy; Semiconducting gallium; Zinc sulfide2013-09-1810.1063/1.48212932016-02-24