Fatima, Shabih2018-10-012018-10-012000b2061421http://hdl.handle.net/1885/147954xi, 178 leavesen-AUQC702.7.I55F37 2000Ion implantationSiliconElectrically active defects in ion implanted Si200010.25911/5d650fb6801eb2018-08-31