Wong, W. C.Elliman, R. G.2026-01-032026-01-030168-583XORCID:/0000-0002-1304-4219/work/167651159https://hdl.handle.net/1885/733803410The effect of implantation temperature and subsequent thermal annealing on the defect structure and strain state of Ge implanted Si is examined. It is shown that ion-beam synthesised SiGe Si strained layer heterostructures are most effectively fabricated by implanting at low temperatures, to form a thick amorphous layer, followed by solid-phase epitaxial crystallisation. In cases where extended defects are produced during implantation, high temperature (∼ 1050°C) annealing is shown to improve the quality of the material by substantially reducing the dislocation density. However, the annealed layers are shown to contain high dislocation densities, ∼ 2 × 108 cm-2, and significant Ge diffusion is observed. The dislocations are shown not to cause significant strain relief in the SiGe alloy layers but may be problematic in certain device applications.6en1995-12-0210.1016/0168-583X(95)00717-23342920178