A comparative study of transistors based on wurtzite and zincblende InAs nanowires

Williams, MarcBurke, Adam M.Joyce, Hannah JMicolich, Adam PaulJagadish, ChennupatiTan, Hark Hoe2015-12-13December 19781424473335http://hdl.handle.net/1885/83508We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100.Keywords: Comparative studies; In-phase; InAs; On/off ratio; Wurtzites; Zinc-blende; Electronic properties; Field effect transistors; Indium arsenide; MESFET devices; Microelectronics; Semiconducting indium; Zinc sulfide; NanowiresA comparative study of transistors based on wurtzite and zincblende InAs nanowires201010.1109/COMMAD.2010.56997402016-02-24