Chen, WenhaoTruong, ThienNguyen, HieuSamundsett, ChristianPhang, PhengMacdonald, DanielCuevas, AndresZhou, LangWan, YimaoYan, Di2024-01-160927-0248http://hdl.handle.net/1885/311491This paper describes the influence of plasma enhanced chemical vapor deposition (PECVD) deposition temperature on heavily doped silicon based (doped-Si/SiOx) passivating contacts for silicon solar cells. The doped-Si films are obtained by PECVD intrinsic amorphous silicon (a-Si) and a subsequent thermal POCl3 diffusion process. By changing the deposition temperature of PECVD, a-Si films with different degrees of crystallinity and density can be obtained. These differences between the a-Si films result in different properties of the passivating contacts in terms of passivation quality and carrier selectivity. By exploring a range of PECVD deposition temperatures from 250 °C to 470 °C, the best passivation quality is obtained at a temperature of 420 °C. On the other hand, the contact resistivity decreases with increasing deposition temperature. After studying the a-Si properties and the resulting passivating contact properties, we obtain optimal passivating contacts with a high implied open-circuit voltage (iVoc) of 742 mV and a low contact resistivity ρc of 6.4 mΩ∙cm2.his work has been supported by the Australian Renewable Energy Agency (ARENA) via the Australian Centre for Advanced Photovoltaics (ACAP). Ellipsometry at the Australian National Fabrication Facility is used for thickness measurement.application/pdfen-AU© 2019 The authorsPassivating contactsPECVD temperatureAmorphous siliconHeavily doped siliconSolar cell202010.1016/j.solmat.2019.1103482022-09-25