Wang, GuoxiangNie, QiuhuaShen, XiangWang, RongpingWu, LiangcaiLv, YegangFu, JingXu, TiefengDai, Shixun2015-12-130167-577Xhttp://hdl.handle.net/1885/71031The thermal and electrical properties of Zn 1.25Sb 2Te 3 film have been investigated for phase change memory (PCM) applications. Compared with the conventional Ge 2Sb 2Te 5, Zn 1.25Sb 2Te 3 film exhibits a higher crystallization temperature (∼200°C), gKeywords: Crystalline thin films; Crystallization temperature; Data retention; Local bonding; On/off ratio; Reset currents; Activation energy; Cerium alloys; Crystalline materials; Germanium; Phase transitions; Thermodynamic properties; Thin films; Zinc; Electric p Electrical properties; Phase transformation; Thermal properties; Thin filmsAdvantages of Zn 1.25 Sb 2 Te 3 material for phase change memory201210.1016/j.matlet.2012.08.0032016-02-24