Geerligs, Lambert JohanMacDonald, Daniel2015-12-131062-7995http://hdl.handle.net/1885/86350The optimisation of base doping for industrial crystalline silicon solar cells is examined with model calculations. Focus is on the relation between base doping and carrier recombination through the important impurities interstitial iron (Fei) and the metastable boron-oxygen (BO) complex. In p-type silicon, the optimum base resistivity is strongly dependent on defect concentration. In n-type silicon, recombination due to Fei is much lower and nearly independent of resistivity. Fei is likely representative for other transition metal impurities. In many real cells a balance between Fei or similar defects, and BO will occur.Keywords: Crystal impurities; Crystalline materials; Doping (additives); Electric conductivity; Iron; Mathematical models; Optimization; Silicon; Back-surface fields (BSF); Base; Recombination; Solar cells Base; Doping; Recombination; Resistivity; Silicon200410.1002/pip.5462015-12-12