Rougieux, FiacreGrant, NicholasMacDonald, Daniel2015-12-131862-6254http://hdl.handle.net/1885/74808In this study, we uncover a recombination-active grown-in defect reducing the minority carrier lifetime of Czochralski grown n-type silicon from 5 ms to below 2 ms. We also demonstrate that the defect can be de-activated by annealing between 300 °C and 3Keywords: Czochralski silicon wafers; Ingot growth; Minority carrier lifetimes; N type silicon; Thermal deactivation; Annealing; Carrier lifetime; Defects; Point defects; Silicon; Silicon wafers Annealing; Carrier lifetime; Point defects; Silicon201310.1002/pssr.2013080532016-02-24