Gao, QiangBuda, ManuelaJagadish, ChennupatiTan, Hark Hoe2015-12-102015-12-10December 81097-2137http://hdl.handle.net/1885/54404An InGaAsN quantum dot (QD) laser structure and a reference InGaAs single quantum well (QW) laser structure were grown on GaAs substrates by metalorganic chemical vapor deposition. A comparison study of photocurrent spectra of these two structures was performed. It was found that InGaAsN QD devices exhibit a lower-energy transition and shows a smaller quantum-confined Stark effect than InGaAs QW devices. Also the wetting layer of InGaAsN QD devices shows a broader absorption peak than the InGaAs QW layer.Keywords: Absorption; Chemical vapor deposition; Electron absorption; Energy absorption; Gallium alloys; Lasers; Metallizing; Photocurrents; Pulsed laser deposition; Quantum electronics; Quantum well lasers; Semiconducting cadmium telluride; Semiconducting indium; InGaAsN; MOCVD; Photocurrent; Quantum dot laser200510.1109/COMMAD.2004.15774792015-12-09