Parkinson, PatrickJiang, NianGao, QiangJagadish, ChennupatiTan, Hark Hoe2015-12-100957-4484http://hdl.handle.net/1885/65559A practical bottleneck prohibiting the rapid, confident and damage-free electrical contacting of vapour-liquid-solid grown nanowires arises from the random spatial distribution and variation in quality of the nanowires, and the contact dimensions required. Established techniques such as electron-beam lithography or focused ion-beam deposition have challenges in scaling, damage or complexity that can make a large statistical sample difficult. We present a direct laser-writing technique to allow rapid electrical contacting of nanowires on a large variety of substrates.Keywords: Damage-free; Direct write; Laser-writing technique; Semiconductor nanowire; Statistical samples; Chemical modification; Photolithography; Nanowires201210.1088/0957-4484/23/33/3357042016-02-24