Russo, S. P.Johnston, P. N.Elliman, R. G.Dooley, S. P.Jamieson, D. N.Pain, G. N.2026-01-032026-01-030168-583XORCID:/0000-0002-1304-4219/work/167651103https://hdl.handle.net/1885/733803433Ion beam analysis has been used to investigate the epitaxial quality and compositional and thickness uniformity of epitaxial Hg1 - xCdxTe (MCT) layers on GaAs substrates grown by low temperature MOCVD. To determine the effect of the ion beam on the MCT layer during a typical measurement, damage studies have been performed by channeling analysis using a nuclear microprobe. Microprobe channeling enabled high flux damage to be investigated. Areas of crystal ranging from approximately 30 × 30 μm2 to 260 × 260 μm2 were scanned using both 2.0 MeV H+ and He+ ions and the χmin measured as a function of ion beam dose. Macrobeam channeling was also performed with an unscanned beam of 1 mm spot size. The results indicate the acceptable range of dose for ion beam analysis.5en1992-02-0210.1016/0168-583X(92)95475-730244439828