Nandi, SanjoyDas, Sujan KumarCui, YuboEl Helou, AssaadNATH, SHIMUL KANTIRatcliff, TomRaad, Peter E.Elliman, Rob2024-03-281944-8244http://hdl.handle.net/1885/316382Metal-oxide-metal (MOM) devices based on niobium oxide exhibit threshold switching (or current-controlled negative differential resistance) due to thermally induced conductivity changes produced by Joule heating. A detailed understanding of the device characteristics therefore relies on an understanding of the thermal properties of the niobium oxide film and the MOM device structure. In this study, we use time-domain thermoreflectance to determine the thermal conductivity of amorphous NbOx films as a function of film composition and temperature. The thermal conductivity is shown to vary between 0.86 and 1.25 W·m-1·K-1 over the composition (x = 1.9 to 2.5) and temperature (293 to 453 K) ranges examined, and to increase with temperature for all compositions. The impact of these thermal conductivity variations on the quasistatic current-voltage (I-V) characteristics and oscillator dynamics of MOM devices is then investigated using a lumped-element circuit model. Understanding such effects is essential for engineering functional devices for nonvolatile memory and brain-inspired computing applications.This work was partly funded by the Australian ResearchCouncil (ARC) and Varian Semiconductor Equipment/Applied Materials through an ARC Linkage Project Grant:LP150100693. We would like to acknowledge access toNCRIS facilities at the ACT node of the Australian NationalFabrication Facility (ANFF) and the Australian Facility forAdvanced ion-implantation Research (AFAiiR), a node of theHeavy-Ion Accelerator Capability. Shimul Kanti Nath acknowl-edges the support of the Forrest Prospect Fellowship awardedby the Forrest Research Foundation, Australia. We alsoacknowledge the facilities and the scientific and technicalassistance of the Australian Microscopy & MicroanalysisResearch Facility at the Centre of Advanced Microscopy,The Australian National Universityapplication/pdfen-AU© 2022 American Chemical Societythermal conductivitymemristorelectroformingvolatile memorynegative differential resistanceniobium oxide202210.1021/acsami.2c046182022-11-13