Thornton, R. P.Elliman, R. G.Williams, J. S.2026-01-032026-01-030168-583XORCID:/0000-0002-1304-4219/work/167651126https://hdl.handle.net/1885/733803367Time resolved reflectivity, Rutherford backscattering and channeling, and transmission electron microscopy have been used to examine the epitaxy of amorphous layers formed by Si+ and Sn+ ion implantation into both 〈100〉 and 〈111〉 silicon. Although Sn at concentrations less than about 1 at.% does not have any influence on the regrowth kinetics of (100) silicon, it has a beneficial effect on the growth of (111) silicon. At high concentrations Sn retards epitaxy and can lead to a polycrystalline phase transformation.We acknowledge the Commonwealth Special Research Centres Scheme, the Australian Research Council and the Victorian State Government for financial support of this project.4en1989-02-0210.1016/0168-583X(89)90209-70024608656