Lu, Hao FengFu, LanJolley, GregJagadish, ChennupatiTan, Hark Hoe2015-12-10December 19781467330459http://hdl.handle.net/1885/60313N-type silicon modulation doping was introduced into the barrier layers of InGaAs/GaAs quantum dot solar cells (QDSC) at two different doping concentrations. An increased energy conversion efficiency of 8.91 % was obtained for the modulation doped deviceKeywords: Active structures; Barrier layers; Doping concentration; Electron population; Modulation doping; Modulation-doped devices; N type silicon; Quantum dot solar cells; Energy conversion; Microelectronics; Modulation; Semiconductor quantum dots; Solar cells; N201210.1109/COMMAD.2012.64723932016-02-24