Tan, JasonMacDonald, DanielRougieux, FiacreCuevas, Andres2015-12-100268-1242http://hdl.handle.net/1885/68594This paper presents new data regarding the formation rate of iron-boron (Fei-B) pairs in p-type crystalline silicon. Improvements in the temperature control of the sample, a reduction in measurement error of the effective lifetime of the sample after allKeywords: Acceptor concentrations; Accurate measurement; Crystalline silicons; Effective lifetime; Formation rates; Iron-acceptor pairs; P-type; Statistical analysis; Time constants; Boron; Iron compounds; Semiconducting gallium compounds; Boron compounds201110.1088/0268-1242/26/5/0550192016-02-24