Macdonald, DanielLiu, An2026-07-032026-07-030370-1972ORCID:/0000-0001-5792-7630/work/219174062ORCID:/0000-0003-4579-5495/work/219175261https://hdl.handle.net/1885/733812716Recently, the possible presence of boron-phosphorus pairs in compensated Si has been proposed in order to explain the unexpected behaviour of boron-oxygen defects in this material. These B-P pairs should also lead to an altered recombination activity of Fe-acceptor pairs in compensated Si, since some of the Fe-acceptor pairs would also be bound to P atoms, altering their energy level and carrier capture properties. In this work, we have used carrier lifetime measurements on Fe-implanted compensated Si wafers, containing both B and P, to identify the Fe-acceptor complexes present. The results indicate that FeB pairs dominate these samples, implying that Fe-B-P complexes, and by extension, B-P pairs, are unlikely to be present in significant concentrations.4enImpurity levelsP-type siliconPhotoconductivityRecombination201010.1002/pssb.20104615777956609537