Cuevas, AndresRecart, F2010-09-212010-12-202010-09-212010-12-20Journal of Applied Physics 98.7 (2005): 074507/1-70021-89791089-7550http://hdl.handle.net/10440/1104http://digitalcollections.anu.edu.au/handle/10440/1104When measuring I-V characteristics and carrier lifetimes in quasi-steady-state QSS conditions, it is important to consider the time dependence of the charge due to excess carriers within the device. This paper shows that the space-charge region present in pn-junction devices and in many lifetime test structures can produce a significant capacitive effect when measuring the low voltage and low carrier density range of QSS I-V curves. Both computer modeling and experiments show that the junction capacitance is particularly significant in the case of low-resistivity silicon wafers, but it can also be noticeable in intermediate and high-resistivity samples. The paper demonstrates that the static I-V characteristics can be accurately reconstructed using a simple analytical model for the space-charge region. It thus fills a gap in the understanding of the low injection range of QSS voltage and lifetime measurements.7 pageshttp://www.sherpa.ac.uk/romeo/index.php "Author can archive pre-print (ie pre-refereeing) … post-print (ie final draft post-refereeing) … [and] publisher's version/PDF. Link to publisher version … [and] Copyright notice required. Publisher's version/PDF can be used on … employers web site. " - from SHERPA/RoMEO site (as at 25/02/10) © 2005 The American Institute of Physics. "This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics." - from publisher web site (as at 04/05/10)siliconelemental semiconductorssemiconductor device measurementcarrier lifetimespace chargep-n junctionscapacitancecarrier densityelectrical resistivity2005-10-1110.1063/1.20739732015-12-11