Park, C. J.Cho, K. H.Yang, W.-C.Cho, H. Y.Choi, Suk-HoElliman, R. G.Han, J. H.Kim, Chungwoo2015-11-032015-11-030003-6951http://hdl.handle.net/1885/16239Metal-oxide-semiconductorstructures containing Genanocrystals (NCs) of 3–4nm diameter and 2×10¹²cm⁻² density are shown to exhibit capacitance-voltage hysteresis of 20.9V, one of the largest observed in Ge-NC based nonvolatile memories. The Ge NCs were fabricated in an oxide of 30nm thickness by ion implantation with 30keV Ge₂⁻ ions to an equivalent fluence of 1×10¹⁶Gecm⁻² followed by annealing at 950 °C for 10min. Secondary ion mass spectroscopy and transmission electron microscopy demonstrate the existence of Ge NCs whose average distance from the SiO₂∕Siinterface is about 6.7nm. It is shown that the memory effect is a likely consequence of charge trapping at Ge NCs and that it is enhanced by accurately controlling the distribution of Ge NCs with respect to the Si∕SiO₂interface.This work was partially supported by the QuantumFunctional Semiconductor Research Center in Dongguk University and by the National Program for Tera Level Nano Devices through MOST. S.-H.C. acknowledges partial support from the National Research Program for the 0.1 Terabit Non-Volatile Memory Development sponsored by Korea Ministry of Science & Technology. R.G.E. additionally acknowledges the Australian Research Council for their partial financial support of this work.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 3/11/15). Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2175495Keywords: Capacitance voltage hysteresis; Ge nanocrystals (NC); Ion mass spectroscopy; Metal oxide semiconductor structures; Capacitance measurement; Electric potential; Germanium; Ion implantation; Nanostructured materials; Silicon compounds; Thin films; Transmiss2006-02-1610.1063/1.21754952015-12-08