MacDonald, DanielMackel, HelmutDoshi, SachinBrendle, WilliCuevas, AndresWilliams, JamesConway, Martin2015-12-132015-12-130003-6951http://hdl.handle.net/1885/86742The deeply penetrating defects in self-ion implanted silicon was studied by using carrier lifetime measurements. The implant was found to result in two distinct regions of lifetime-reducing damage. The results showed that the annealing at higher temperatures reduced the severity of both the surface and the deeply propagated defects.Keywords: Annealing; Dislocations (crystals); Ion implantation; Transmission electron microscopy; Residual defects; Silicon200310.1063/1.15724692015-12-12