Macdonald, DCuevas, AndresKinomura, ANakano, Yukihiro2003-07-302004-05-192011-01-052004-05-192011-01-052002http://hdl.handle.net/1885/40829http://digitalcollections.anu.edu.au/handle/1885/40829Neutron Activation Analysis (NAA) is a powerful and sensitive technique for measuring trace amounts of impurities. In this work, we have applied NAA to the problem of identifying metallic impurities within the bulk of solar-grade cast multicrystalline silicon (mc-Si) wafers. In particular, the change in concentrations of these contaminants after phosphorus gettering is monitored, revealing a marked reduction in some metal species, but not in others.110841 bytes361 bytesapplication/pdfapplication/octet-streamen-AUNeutron Activation AnalysisNAAmulticrystalline silicon wafersphosphorus gettering2002