Yu, Kin ManRidgway, Mark C2015-12-130168-583Xhttp://hdl.handle.net/1885/90034Group V elements with mass ranging from 35 to 122 amu have been co-implanted with Zn in InP substrates. Co-implantation with all group V elements drastically reduced Zn out-diffusion and to a certain extent also inhibited Zn in-diffusion. The reduction in out-diffusion was insensitive to the group V element mass and thus, to implantation-induced damage. We believe the group V element excess created an In-vacancy excess that enhanced Zn substitution into the In sublattice. A maximum hole concentration of 7×1018 cm-3 was achieved with P co-implantation. Electrochemical capacitance-voltage profiling clearly showed a decrease in hole concentration as a function of increasing group V element mass. This was attributed to differences in compensating residual implantation-induced damage.Keywords: Capacitance; Carrier concentration; Composition effects; Crystal impurities; Diffusion; Electric potential; Ion implantation; Semiconducting zinc compounds; Semiconductor doping; Capacitance-voltage characteristics; Semiconducting indium phosphide200010.1016/S0168-583X(99)00806-X2015-12-12