Umezu, IkurouKohno, AWarrender, Jeffrey M.Takatori, YHirao, YNakagawa, SSugimura, ACharnvanichborikarn, SupakitWilliams, JamesAziz, Michael2015-12-08July 25-309780735410022http://hdl.handle.net/1885/33973Single crystalline silicon supersaturated with sulfur was prepared by ion implantation followed by pulsed laser melting and rapid solidification. A strong and broad optical absorption band and free-carrier absorption appeared for this sample around 0.5 eV and below 0.2 eV, respectively. A possible candidate for the origin of the 0.5 eV band is the formation of an impurity band by supersaturated doping.Keywords: impurity band; optical absorption; Pulsed laser melting; silicon; solidification; sulfur; supersaturation201110.1063/1.36662522016-02-24