Shan, WeiYu, Kin ManWalukiewicz, WAger, J WHaller, E ERidgway, Mark C2015-12-130003-6951http://hdl.handle.net/1885/93405The optical properties of nitrogen implanted GaAs and AlGaAs were investigated. The change in band-gap energy in the implanted region was analyzed using photomodulation spectroscopy. Results showed that by increasing N+ implantation dosage, the fundamental band-gap energy decreases.Keywords: Annealing; Ion implantation; Light modulation; Metallorganic chemical vapor deposition; Molecular beam epitaxy; Nitrogen; Semiconducting aluminum compounds; Semiconducting gallium compounds; Semiconductor growth; Spectroscopic analysis; Synthesis (chemica19992015-12-12