High rate etching of 4H-SiC using a SF6/O2 helicon plasma

Chabert, PascalProust, NPerrin, JBoswell, Roderick2015-12-130003-6951http://hdl.handle.net/1885/89260The etch rate of 4H-SiC in a SF6 helicon plasma has been investigated as a function of pressure, power injected in the source, substrate bias voltage, and distance between the substrate holder and the helicon source. The highest etch rate yet reported ofHigh rate etching of 4H-SiC using a SF6/O2 helicon plasma20002015-12-12