Messing, Maria EWong-Leung, JenniferZanolli, ZeilaJoyce, Hannah JGao, QiangWallenberg, L ReineJohansson, JonasJagadish, ChennupatiTan, Hark Hoe2015-12-081530-6984http://hdl.handle.net/1885/31128One of the main motivations for the great interest in semiconductor nanowires is the possibility of easily growing advanced heterostructures that might be difficult or even impossible to achieve in thin films. For III-V semiconductor nanowires, axial heterostructures with an interchange of the group III element typically grow straight in only one interface direction. In the case of InAs-GaAs heterostructures, straight nanowire growth has been demonstrated for growth of GaAs on top of InAs, but so far never in the other direction. In this article, we demonstrate the growth of straight axial heterostructures of InAs on top of GaAs. The heterostructure interface is sharp and we observe a dependence on growth parameters closely related to crystal structure as well as a diameter dependence on straight nanowire growth. The results are discussed by means of accurate first principles calculations of the interfacial energies. In addition, the role of the gold seed particle, the effect of its composition at different stages during growth, and its size are discussed in relation to the results observed.Keywords: First-principles calculation; GaAs; Gold seeds; Group III; Growth parameters; Heterostructure interfaces; II-IV semiconductors; InAs; Nanowire heterostructures; Semiconductor nanowire; Straight nanowires; Crystal structure; Crystals; Film growth; Gallium crystal structure; GaAs; heterostructures; InAs; MOVPE; Nanowire201110.1021/nl202051w2016-02-24