Xu, Xiao-YongYin, ZongyouXu, Chun-XiangDai, JunHu, Jing-Guo2018-11-292018-11-290003-6951http://hdl.handle.net/1885/151984A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼10 4), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriersapplication/pdf201410.1063/1.48627552018-11-29