Kang, Jung-HyunGao, QiangJoyce, Hannah JKim, YongGuo, YananXu, HongyiZou, JinFickenscher, M ASmith, Leigh MJackson, Howard EYarrison-Rice, Jan MJagadish, ChennupatiTan, Hark Hoe2015-12-13December 19781424473335http://hdl.handle.net/1885/71908GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires.Keywords: Core-shell nanowires; Emission energies; GaAs; Optical characterization; Shell thickness; Si substrates; Si surfaces; Si(111) substrate; Two-temperature; Crystal structure; Gallium arsenide; Microelectronics; Nanowires; Semiconducting gallium; Silicon; Ga201010.1109/COMMAD.2010.56997782016-02-24