Gao, QianFu, LanParkinson, PatrickBreuer, SteffanWong-Leung, JenniferJagadish, ChennupatiTan, Hark Hoe2015-12-10December 19781467330459http://hdl.handle.net/1885/60153A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K.Keywords: High quality; InP; Metal-organic; Nanowires (NWs); Optical qualities; Time-resolved photoluminescence; Vapour-phase; Microelectronics; Nanowires201210.1109/COMMAD.2012.64723522016-02-24