Bourim, El MostafaPark, SangsooLiu, XinjunBiju, Kuyyadi P.Hwang, HyunsangIgnatiev, Alex2015-12-101099-0062http://hdl.handle.net/1885/65508This work presents the investigation of resistive switching memory in a perovskite heterostructure composed of an active Al-Nb codoped Pb(Zr0.52Ti0.48)O3 ferroelectric thin film and a semiconducting Pr0.7Ca0.3MnO3 manganite-based oxide film, both sandwiched between Pt electrodes in a parallel capacitor-like structure. Bipolar resistive switching nature was confirmed from the measured characteristics of the DC I-V hysteresis loop and resistance switching in the pulse mode. The active ferroelectric layer has been demonstrated to play a crucial role in controlling the switching memory performance (resistance state stability and high switching endurance). Ferroelectric polarization and corresponding piezoelectric effect-induced lattice strains are found to be responsible for the resistive switching characteristics in this ferroelectric/manganite heterojunction.Keywords: Co-doped; Ferroelectric layers; Ferroelectric polarization; Heterostructures; Lattice strain; Memory performance; Parallel capacitors; Piezo-electric effects; Pt electrode; Pulse modes; Resistance state; Resistance switching; Resistive switching; Resistiv201110.1149/1.35569772016-02-24