Rolland, ChloéCaroff, PhilippeCoinon, ChristopheWallart, XavierLeturcq, Renaud2015-09-222015-09-220003-6951http://hdl.handle.net/1885/15643We have investigated in-situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore the Si incorporation strongly influences the lateral growth of the nanowires without giving rise to significant tapering, revealing the complex interplay between axial and lateral growth.This work was supported by the ANR through the Project No. ANR-11-JS04-002-01, and the Ministry of Higher Education and Research, Nord-Pas de Calais Regional Council and FEDER through the “Contrat de Projets Etat Region (CPER) 2007-2013.” P.C. is the recipient of an Australian Research Council Future Fellowship (project number FT120100498).http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 22/09/15). Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Rolland, Chloé et al. Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy, Applied Physics Letters, 102.22, 223105 (2013)) and may be found at https://doi.org/10.1063/1.4809576Keywords: Dopant incorporation; Electrical measurement; Gold seeds; Inas nanowires; Lateral growth; n-Type doping; Si-doping; Carrier concentration; Electron density measurement; Epitaxial growth; Gold; Molecular beam epitaxy; Semiconductor doping; Silicon; NanowirInhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy2013-07-0810.1063/1.48095762016-02-24