Luther-Davies, BarryKim, Tae-HyunElliman, RobertChoi, Duk-Yong2015-12-07August 15-9781457715150http://hdl.handle.net/1885/26413Germanium-on-insulator (GeOI) is a promising platform for silicon-based photonics as well as microelectronics. In this work GeOI structures were produced by a modified Ge-condensation technique, in which Ge ions were implanted into a top silicon layer. Through an appropriate schedule of cyclic dry oxidation, a ∼20 nm thick, single crystalline Ge layer could be obtained. Structural investigation confirmed that the layer was fully-relaxed, which is desirable for the overgrowth of Ge and GaAs for photonic applications.Keywords: Dry oxidation; GaAs; Ge condensation; Germanium-on-insulator; Photonic application; Silicon based photonics; Silicon layer; Single-crystalline; Structural investigation; Condensation; Germanium; Microelectronics; Nanotechnology; Photonic devices; Photonic Germanium condensation; Germanium-on-insulator (GeOI); Ion implantation; photonic devices201110.1109/NANO.2011.61443652016-02-24