Role of F on the Electrical Activation of As in Ge

Impellizzeri, GNapolitani, EBoninelli, SSullivan, JamesRoberts, JasonBuckman, StephenRuffell, SimonPriolo, FrancescoPrivitera, V2015-12-082162-8769http://hdl.handle.net/1885/29323Fluorine is known to strongly influence the dopant diffusion and electrical activation in Si. Similar effects might be exploited in Ge for optimizing its application in microelectronics. The role of F on the electrical activation of As in Ge after thermalRole of F on the Electrical Activation of As in Ge201210.1149/2.009203jss2015-12-08