Elliman, RobertNawaz (Saleh), MuhammadKim, Sung-IVenkatachalam, DineshKim, Tae-HyunBelay, Kidane2015-12-102015-12-10April 5-91946-4274http://hdl.handle.net/1885/51108The forming voltage and set/reset response of sputter-deposited NiO thin films is studied as a function of implant fluence for samples implanted with Ni and O ions. The forming voltage of the films is shown to decrease with increasing ion fluence and to scale with the damage production rate of the different ions. In contrast, the set/reset response of the films was largely unaffected by the ion-implantation. These results are discussed in terms of the filamentary model of conduction and the thermochemical model of resistive switching.Keywords: Fluences; Ion fluences; NiO thin film; Production rates; Resistive switching; Switching response; Thermochemical models; Thin films; Ions201010.1557/PROC-1250-G05-062016-02-24